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                ? 2000 IXYS All rights reserved 1 - 2 HiPerFREDTM Epitaxial Diode with soft recovery Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf C A A = Anode, C = Cathode, TAB = Cathode C A TO-220 AC C (TAB) Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 8-12A IFAV VRRM = 1200 V trr = 40 ns = 10 A VRSM VRRM Type V V 1200 1200 DSEP 8-12A Symbol Conditions Maximum Ratings IFRMS IFAVM 35 A TC = 115°C; rectangular, d = 0.5 10 A IFSM TVJ = 45°C; t p = 10 ms (50 Hz), sine 40 A EAS TVJ = 25°C; non-repetitive 6.9 mJ IAS = 8 A; L = 180 μH IAR VA = 1.25 ·VR typ.; f = 10 kHz; repetitive 0.8 A TVJ TVJM Tstg -55...+175 °C 175 °C -55...+150 °C Ptot TC = 25°C 60 W Md mounting torque 0.4...0.6 Nm Weight typical 2 g Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C V R = VRRM TVJ = 150°C V R = VRRM 60 A 0.25 mA VF IF = 10 A; T VJ = 150°C 1.96 V TVJ = 25°C 2.94 V RthJC RthCH 2.5 K/W 0.5 K/W trr IF = 1 A; -di/dt = 50 A/ s; 40 ns VR = 30 V; T VJ = 25°C IRM VR = 100 V; I F = 12 A; -di F/dt = 100 A/s4 A TVJ = 100°C 008 |